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Design and fabrication of GaAs/AlGaAs single electron transistors based on in-plane Schottky gate control of 2DEG

✍ Scribed by H. Tomozawa; K. Jinushi; H. Okada; T. Hashizume; H. Hasegawa


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
241 KB
Volume
227
Category
Article
ISSN
0921-4526

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