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Fabrication and characterisation of SiGe based in-plane-gate transistors

✍ Scribed by T. Köster; J. Stein; B. Hadam; J. Gondermann; B. Spangenberg; H.G. Roskos; H. Kurz; M. Holzmann; M. Riedinger; G. Abstreiter

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
319 KB
Volume
35
Category
Article
ISSN
0167-9317

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✦ Synopsis

We prescnt an in-situ technology for fabrication of barrier structures in modulation-doped Si/SiGc inplane-gale (IPG) transistors. A special multilavcr-resist system is developed for pattern transfcr by clcclronbeam lithography (EBL) and auisotropic SFe/O_, dry etching Barriers arc rcalizcd by etchqrcnches cutting thc tv,o dimensional electron gas (2DEG). The trenchcs are filled up with a low tcmpcraturc remote plasma enhanced chemical vapour deposition (RPECVD) of silicondioxide (SiO,). Dry-etching and passivation arc done in-situ to avoid contamination. IPG transistors '~vith different geometric dimensions have been fabricatcd and electrically characteriscd Transistor opcration is dcmonstratcd up to T=77 K. The breakdmvn voltage and the depletion length of the devices are estimated. The obtaincd data indicate the advantagc of the prescntcd insitu technology in comparison to other fabrication techniques.

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