Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping

✍ Scribed by D Reuter; C Meier; A Seekamp; A.D Wieck

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 72 KB
• Volume: 13
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00239-4

✦ Synopsis

In-plane-gate (IPG) transistors have been fabricated using focused ion beam implantation doping of GaAs=In0:1Ga0:9As= Al0:35Ga0:65As heterostructures. At room temperature in the dark, the devices show good transistor characteristics and-in contrast to IPG transistors deÿned by insulation writing using ion implantation-the observed enhancement behavior is very good. For typical devices the source-drain current in the saturation region of 1:6 A at zero gate voltage could be increased by one order of magnitude to 16 A by a positive gate voltage of 8 V. This improvement in the enhancement behavior with respect to IPG transistors deÿned by insulation writing is attributed to the higher electronic transport quality in the edge regions of the channel. The gate leakage current for typical operation parameters is below 350 nA and at a gate voltage of -1 V the channel is completely pinched o .