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Direct writing of in-plane-gated nanostructures by focused laser beam-induced doping

✍ Scribed by P Baumgartner; W Wegscheider; M Bichler; G Groos; G Abstreiter


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
275 KB
Volume
2
Category
Article
ISSN
1386-9477

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Fabrication of two-dimensional in-plane
✍ D Reuter; C Meier; A Seekamp; A.D Wieck πŸ“‚ Article πŸ“… 2002 πŸ› Elsevier Science 🌐 English βš– 72 KB

In-plane-gate (IPG) transistors have been fabricated using focused ion beam implantation doping of GaAs=In0:1Ga0:9As= Al0:35Ga0:65As heterostructures. At room temperature in the dark, the devices show good transistor characteristics and-in contrast to IPG transistors deΓΏned by insulation writing usi