Magnetotransport properties of hall-bar with focused-ion-beam written in-plane-gate

Fabrication of two-dimensional in-plane

Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping

✍ D Reuter; C Meier; A Seekamp; A.D Wieck 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 72 KB

In-plane-gate (IPG) transistors have been fabricated using focused ion beam implantation doping of GaAs=In0:1Ga0:9As= Al0:35Ga0:65As heterostructures. At room temperature in the dark, the devices show good transistor characteristics and-in contrast to IPG transistors deÿned by insulation writing usi