The electronic availability of ZnO thin film as a semiconducting material for MIS structure was investigated by depositing a dielectric Ta O thin layer. A ZnO (100 nm) thin film was deposited on p-Si by rf magnetron 2 5 sputtering. High frequency (1 MHz) capacitance-voltage (C-V ) and conductance-vo
โฆ LIBER โฆ
Electrical properties of Ta2O5films deposited on ZnO
โ Scribed by S K Nandi; S Chatterjee; S K Samanta; G K Dalapati; P K Bose; S Varma; Shivprasad Patil; C K Maiti
- Book ID
- 110646930
- Publisher
- Springer-Verlag
- Year
- 2003
- Tongue
- English
- Weight
- 321 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0250-4707
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