Characteristics of MIS capacitors using Ta2O5 films deposited on ZnO/p-Si
✍ Scribed by Y.S. Noh; S. Chatterjee; S. Nandi; S.K. Samanta; C.K. Maiti; S. Maikap; W.K. Choi
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 160 KB
- Volume
- 66
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
The electronic availability of ZnO thin film as a semiconducting material for MIS structure was investigated by depositing a dielectric Ta O thin layer. A ZnO (100 nm) thin film was deposited on p-Si by rf magnetron 2 5 sputtering. High frequency (1 MHz) capacitance-voltage (C-V ) and conductance-voltage (G-V ) characteristics of the deposited Ta O films were measured. The values of flat-band (V ) voltages are found to be 21.6 V and 2 5 fb the negative flat-band voltage shift with respect to the ideal MIS capacitor indicates the existence of positive charge trapping in the plasma grown Ta O films. The fixed oxide charge density (Q /q) is found to be 2 5 f 11 22 2.48310 cm while the interface trap charge density (D ) at mid-gap, calculated using Hill's method from it 12 22 21
the G-V curve, is found to be 1.22310 cm eV .