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Dielectric properties of thin Ta2O5 films

โœ Scribed by Martinez-Duart, J. M. ;Velilla, J. L. ;Albella, J. M. ;Rueda, F.

Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
308 KB
Volume
26
Category
Article
ISSN
0031-8965

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Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCI 5 as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta205 film were investigated for AI/Ta20J p-Si (MTS) capacitors. The de