Effect of deposition temperature on dielectric properties of PECVD Ta2O5thin film

✍ Scribed by Hwan Seong Moon; Jae Suk Lee; Sung Wook Han; Jong Wan Park; Jae Hak Lee; Seung Kee Yang; Hyung Ho Park

• Publisher: Springer
• Year: 1994
• Tongue: English
• Weight: 308 KB
• Volume: 29
• Category: Article
• ISSN: 0022-2461
• DOI: 10.1007/bf00368923

✦ Synopsis

Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCI 5 as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta205 film were investigated for AI/Ta20J p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta20~ deposited by PECVD was amorphous as-deposited. However, crystalline ~-Ta205 of hexagonal structure was formed by a 700 ~ 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta205 were found to be 2.54 fF ~tm -2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.