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Electrical properties of PECVD amorphous silicon—carbon alloys from amorphous—crystalline heterojunctions

✍ Scribed by Marsal, L.F.; Pallarès, J.; Correig, X.; Domínguez, M.; Bardés, D.; Calderer, J.; Alcubilla, R.

Book ID
122681547
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
468 KB
Volume
6
Category
Article
ISSN
0925-9635

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Properties of interfaces in amorphous/cr
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✍ Olibet, Sara ;Vallat-Sauvain, Evelyne ;Fesquet, Luc ;Monachon, Christian ;Hessle 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 852 KB

## Abstract To study recombination at the amorphous/crystalline Si (a‐Si:H/c‐Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechan