## Abstract The DC saddleβfield (DCSF) glow discharge method was used to deposit intrinsic aβSi:H onto cβSi to passivate the cβSi surface. The effective minority carrier lifetime in the heterostructures as a function of the excess minority carrier density in the cβSi wafers was measured. The result
β¦ LIBER β¦
Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD
β Scribed by B. Halliop; M.F. Salaun; W. Favre; R. Varache; M.E. Gueunier-Farret; J.P. Kleider; N.P. Kherani
- Book ID
- 119301137
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 450 KB
- Volume
- 358
- Category
- Article
- ISSN
- 0022-3093
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