## Abstract To study recombination at the amorphous/crystalline Si (aβSi:H/cβSi) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechan
β¦ LIBER β¦
Differences in the electrical properties of the interfaces of PECVD silicon nitride with amorphous and crystalline silicon
β Scribed by M.C. Habrard; M. Bensouda; J.C. Bruyere; D. Jousse
- Book ID
- 115986831
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 206 KB
- Volume
- 115
- Category
- Article
- ISSN
- 0022-3093
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