## Abstract The microstructural and electrical properties of Ti/Re/Au (10 nm/10 nm/50 nm) ohmic contacts to moderately doped nβtype GaN (4.0 Γ 10^18^ cm^β3^) have been investigated by currentβvoltage (__I__ β__V__), Auger electron microscopy (AES) and transmission electron microscopy (TEM). The ele
Electrical Properties and Microstructure of Transparent ZnO Contacts to GaN
β Scribed by E. Kaminska; A. Piotrowska; K. Golaszewska; A. Barcz; R. Kruszka; T. Ochalski; J. Jasinski; Z. Liliental-Weber
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 91 KB
- Volume
- 0
- Category
- Article
- ISSN
- 1862-6351
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