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Electrical profiles of ultrashallow p+ layers formed in Si by low-energy BF2+ ion implantation

✍ Scribed by Tamaki, Y.; Ozaki, D.; Inada, T.

Book ID: 118249338
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 407 KB
Volume: 97
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1871336

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