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X-ray-emission study of the structure of Si:H layers formed by low-energy hydrogen-ion implantation

✍ Scribed by V. R. Galakhov; I. V. Antonova; S. N. Shamin; V. I. Aksenova; V. I. Obodnikov; A. K. Gutakovskii; V. P. Popov

No coin nor oath required. For personal study only.

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