𝔖 Bobbio Scriptorium

✦ LIBER ✦

Electrical damage induced by ion beam etching of GaAs: A Scherer et al, J Vac Sci Technol, B6, 1988, 277–279

Book ID: 103473376
Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 155 KB
Volume: 39
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(89)90959-7

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of ion beam etching ind

Characterization of ion beam etching induced defects in GaAs: Yoshihiko Yuba et al, J Vac Sci Technol, B6, 1988, 253–256

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 148 KB

Ion-beam-induced desorption of Arn+ ion

Ion-beam-induced desorption of Arn+ ion clusters: J W Christiansen et al, J Vac Sci Technol, A6, 1988, 699–702

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 152 KB

Growth of GaAs, AlGaAs, and InGaAs on (1

Growth of GaAs, AlGaAs, and InGaAs on (111) B GaAs by molecular-beam epitaxy: K Elcess et al, J Vac Sci Technol, B6, 1988, 638–641

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 155 KB

Morphology of thermally etched GaAs subs

Morphology of thermally etched GaAs substrate and molecular-beam epitaxial layers grown on its substrate: Junji Saito et al, J Vac Sci Technol, B6, 1988, 26–30

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 151 KB

Molecular-beam epitaxy growth of GaAs/In

Molecular-beam epitaxy growth of GaAs/InAs structures on (001)InP by alternating III/V fluxes: R Katsumi et al, J Vac Sci Technol, B6, 1988, 593–596

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 156 KB

7349. Etching procedures of GaAs: cathod

7349. Etching procedures of GaAs: cathodoluminescence study of the induced damages and of the recovering techniques: A C Papadopoulo et al, J Vac Sci Technol, B8, 1990, 407–412

📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 150 KB