𝔖 Bobbio Scriptorium

✦ LIBER ✦

Growth of GaAs, AlGaAs, and InGaAs on (111) B GaAs by molecular-beam epitaxy: K Elcess et al, J Vac Sci Technol, B6, 1988, 638–641

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 155 KB
Volume: 39
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(89)90461-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Study of molecular-beam epitaxy GaAs1−xS

Study of molecular-beam epitaxy GaAs1−xSbx (x < 0.76) grown on GaAs (100): J H Zhao et al, J Vac Sci Technol, B6, 1988, 627–630

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 155 KB

Molecular-beam epitaxy growth of GaAs/In

Molecular-beam epitaxy growth of GaAs/InAs structures on (001)InP by alternating III/V fluxes: R Katsumi et al, J Vac Sci Technol, B6, 1988, 593–596

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 156 KB

7290. Growth of high quality AlGaAs/GaAs

7290. Growth of high quality AlGaAs/GaAs heterostructures by gas source molecular-beam epitaxy: Yu-Min Houng et al,J Vac Sci Technol, B8, 1990, 355–359

📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 152 KB

Morphology of thermally etched GaAs subs

Morphology of thermally etched GaAs substrate and molecular-beam epitaxial layers grown on its substrate: Junji Saito et al, J Vac Sci Technol, B6, 1988, 26–30

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 151 KB

Molecular-beam epitaxial growth mechanis

Molecular-beam epitaxial growth mechanisms on the GaAs(100) surface: James P Harbison and Helen H Farrell, J Vac Sci Technol, B6, 1988, 733–735

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 155 KB

Growth and properties of doped CdTe film

Growth and properties of doped CdTe films grown by photoassisted molecular-beam epitaxy: S Hwang et al, J Vac Sci Technol, B6, 1988, 777–778

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 146 KB