Molecular-beam epitaxy growth of GaAs/InAs structures on (001)InP by alternating III/V fluxes: R Katsumi et al, J Vac Sci Technol, B6, 1988, 593–596

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 156 KB
• Volume: 39
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(89)90895-6