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Electrical characterization of TiO2 gate oxides on strained-Si

โœ Scribed by C.K. Maiti; S.K. Samanta; G.K. Dalapati; S.K. Nandi; S. Chatterjee

Book ID
104050164
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
190 KB
Volume
72
Category
Article
ISSN
0167-9317

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โœฆ Synopsis

The electrical properties of low temperature (150 ยฐC) plasma deposited TiO 2 gate dielectrics on strained-Si are reported. The deposited films have been analyzed by X-ray photoelectron spectroscopy for chemical composition. The interfacial and electrical properties of the deposited films have been characterized using a metal-insulator-semiconductor (MIS) capacitor structure. The charge trapping properties in TiO 2 gate dielectrics have been studied using constant current stressing. The leakage current has been found to be dominated by the Poole-Frenkel emission.

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