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Electrical characterization of defects in heavy-ion implanted n-type Ge

✍ Scribed by F.D. Auret; P.J. Janse van Rensburg; M. Hayes; J.M. Nel; S. Coelho; W.E. Meyer; S. Decoster; V. Matias; A. Vantomme; D. Smeets

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
140 KB
Volume
257
Category
Article
ISSN
0168-583X

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The possibility of making devices which use the high charge carrier mobility of Ge in mainstream semiconductor technology has drawn attention to the very limited understanding of ion implantation damage in germanium and the defect reactions associated with its removal. Results of DLTS and high-resol