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Electrical characterization of defects created in the Si-SiO2system by ionizing radiation

โœ Scribed by Edward H. Nicollian

Book ID
112815102
Publisher
Springer US
Year
1992
Tongue
English
Weight
1018 KB
Volume
21
Category
Article
ISSN
0361-5235

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Electrical characterization of defects i
Electrical characterization of defects induced by 12 MeV electrons in pโ€”type Si-SiO2 structures
โœ KG Stefanov; S Kaschieva; D Karpuzov ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 213 KB

The effect of 12 MeV electron irradiation of p-type Si-SiO 2 structures is studied by Deep Level Transient Spectroscopy (DLTS) measurements. The DLTS spectra of non-irradiated samples exhibit one peak only corresponding to a deep level located in the forbidden gap at 0.56 eV above the valence band e