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Electrical characterization of surface defects in GaSb created by hydrogen plasma

โœ Scribed by Dutta, P. S.; Sangunni, K. S.; Bhat, H. L.; Kumar, Vikram


Book ID
127309459
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
263 KB
Volume
66
Category
Article
ISSN
0003-6951

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Electrical characterization of deep leve
โœ C. Nyamhere; J.R. Botha; A. Venter ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 439 KB

Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K