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Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

✍ Scribed by Laegu Kang, ; Byoung Hun Lee, ; Wen-Jie Qi, ; Yongjoo Jeon, ; Nieh, R.; Gopalan, S.; Onishi, K.; Lee, J.C.

No coin nor oath required. For personal study only.

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