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Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/

✍ Scribed by Wu, Y.H.; Yang, M.Y.; Chin, A.; Chen, W.J.; Kwei, C.M.

Book ID: 118209737
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 64 KB
Volume: 21
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.847374

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