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The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

✍ Scribed by L.G. Gao; K.B. Yin; L. Chen; H.X. Guo; Y.D. Xia; J. Yin; Z.G. Liu

No coin nor oath required. For personal study only.

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