Electrical characteristics of 100 MeV 28Si implanted LEC grown GaAs〈100〉
✍ Scribed by S. Arulkumaran; J. Arokiaraj; M. Udhayasankar; J. Kumar; D. Kanjilal
- Book ID
- 113287974
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 529 KB
- Volume
- 117
- Category
- Article
- ISSN
- 0168-583X
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Damage in n-GaAs implanted with 100 MeV 28 Si ions has been investigated using low temperature (T $ 20 K) photoluminescence (PL) measurements on samples irradiated with fluences of 10 16 ions m À2 , 10 17 ions m À2 and 10 18 ions m À2 , respectively and annealed at various temperatures up to 1000 °C
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