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Annealing effects on electrical characteristics of 100 MeV28Si implantation in GaAs

โœ Scribed by A. M. Narsale; A. R. Damle; Yousuf P. Ali; D. Kanjilal; B. M. Arora; A. P. Shah; S. G. Lokhre; V. P. Salvi

Book ID
110270433
Publisher
Springer US
Year
2000
Tongue
English
Weight
122 KB
Volume
11
Category
Article
ISSN
0957-4522

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Photoluminescence study of GaAs implante
Photoluminescence study of GaAs implanted with 100 MeV 28Si ions
โœ Y.P. Ali; A.M. Narsale; B.M. Arora ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 163 KB

Damage in n-GaAs implanted with 100 MeV 28 Si ions has been investigated using low temperature (T $ 20 K) photoluminescence (PL) measurements on samples irradiated with fluences of 10 16 ions m ร€2 , 10 17 ions m ร€2 and 10 18 ions m ร€2 , respectively and annealed at various temperatures up to 1000 ยฐC