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Near-infrared transmission characteristics of GaAs implanted with high energy (100 Mev) 28Si ions

โœ Scribed by A.R. Damle; A.M. Narsale; Yousuf P. Ali; B.M. Arora; M.R. Gokhale; D. Kanjilal; V.P. Salvi


Book ID
114171917
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
195 KB
Volume
168
Category
Article
ISSN
0168-583X

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Damage in n-GaAs implanted with 100 MeV 28 Si ions has been investigated using low temperature (T $ 20 K) photoluminescence (PL) measurements on samples irradiated with fluences of 10 16 ions m ร€2 , 10 17 ions m ร€2 and 10 18 ions m ร€2 , respectively and annealed at various temperatures up to 1000 ยฐC

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## Infra-red transmission and electrical characteristics of single crystal GaAs substrates implanted with 70 MeV "'Sn ions have been investigated after implantation andsubsequentannealing treatments. The optical density cxx is found to increase with implanted dose overphoton energy range 0.6-1.4 e