𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical breakdown in thin gate and tunneling oxides

✍ Scribed by Ih-Chin Chen; Holland, S.E.; Chenming Hu

Book ID
114595073
Publisher
IEEE
Year
1985
Tongue
English
Weight
938 KB
Volume
32
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Intrinsic dielectric breakdown of ultra-
Intrinsic dielectric breakdown of ultra-thin gate oxides
✍ S. Lombardo πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 355 KB

We have investigated the dynamics of intrinsic dielectric breakdown (BD) in SiO thin films of thickness in the range 2 from 35 to 3 nm. BD is obtained under constant voltage Fowler-Nordheim stress at fields between 10 and 12.5 MV/ cm. As a function of oxide thickness we have followed with high time

Modeling the breakdown and breakdown sta
Modeling the breakdown and breakdown statistics of ultra-thin SiO2 gate oxides
✍ Jordi SuΓ±Γ©; Ernest Wu πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 101 KB

A complete picture of breakdown is presented and compared with a full set of experiments. First, an analytical model for the breakdown statistics is proposed. This model is shown to have essentially the same predictive power as the percolation approach. Second, a hydrogen-based quantitative picture