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Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition

✍ Scribed by N. Huby; S. Ferrari; E. Guziewicz; M. Godlewski; V. Osinniy

Book ID
125540602
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
404 KB
Volume
92
Category
Article
ISSN
0003-6951

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## Abstract Atomic layer deposition (ALD) was used to fabricate transparent and conductive thin films of ZnO. Two hundred‐nano metre thick ZnO films were deposited on glass substrates at low growth temperatures varied between 120 and 240 °C. As zinc and oxygen precursors we used diethylzinc (DEZn)