## Abstract Atomic layer deposition (ALD) was used to fabricate transparent and conductive thin films of ZnO. Two hundredβnano metre thick ZnO films were deposited on glass substrates at low growth temperatures varied between 120 and 240βΒ°C. As zinc and oxygen precursors we used diethylzinc (DEZn)
Aluminum-doped zinc oxide films grown by atomic layer deposition for transparent electrode applications
β Scribed by G. Luka; T. A. Krajewski; B. S. Witkowski; G. Wisz; I. S. Virt; E. Guziewicz; M. Godlewski
- Publisher
- Springer US
- Year
- 2011
- Tongue
- English
- Weight
- 903 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0957-4522
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We investigated the aluminum distribution in aluminum-doped zinc oxide films grown by atomic layer deposition. Surface morphology, structure, composition and electrical properties of obtained films were studied. For the aluminum content less than 2 at.%, a periodicity of Al distribution along the la
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