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Electrical and physical characterization of remote plasma oxidized HfO2 gate dielectrics

โœ Scribed by Yamamoto, K.; Deweerd, W.; Aoulaiche, M.; Houssa, M.; De Gendt, S.; Horii, S.; Asai, M.; Sano, A.; Hayashi, S.; Niwa, M.


Book ID
114618230
Publisher
IEEE
Year
2006
Tongue
English
Weight
529 KB
Volume
53
Category
Article
ISSN
0018-9383

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โœ Xinhong Cheng; Dawei He; Zhaorui Song; Yuehui Yu; Dashen Shen ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier โš– 336 KB

HfO 2 gate dielectric films with a blocking layer of Al 2 O 3 inserted between HfO 2 layer and Si layer (HfO 2 /Si) were treated with rapid thermal annealing process at 700 . The interfacial structure and electrical properties were reported. The results of X-ray photoelectron spectroscopy showed tha