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Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

✍ Scribed by Liu-Ying Huang; Ai-Dong Li; Wen-Qi Zhang; Hui Li; Yi-Dong Xia; Di Wu

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 540 KB
Volume: 256
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2009.10.094

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