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Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates

✍ Scribed by Takamori, Takeshi; Fukunaga, Toshiaki; Kobayashi, Junji; Ishida, Koichi; Nakashima, Hisao

Book ID
126265867
Publisher
Institute of Pure and Applied Physics
Year
1987
Tongue
English
Weight
915 KB
Volume
26
Category
Article
ISSN
0021-4922

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The photoluminescence (PL) of undoped, Si-doped, and Be-doped GaAs nanowires (NWs) grown on Si substrates by molecular beam epitaxy was investigated. PL peaks of the undoped and Be-doped NWs were observed at higher energies than the bandgap energy of GaAs bulk. According to X-ray diffraction analysi