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Optical and electrical properties of Mn‐doped GaAs grown by molecular‐beam epitaxy

✍ Scribed by Ilegems, M.; Dingle, R.; Rupp Jr., L. W.


Book ID
118000812
Publisher
American Institute of Physics
Year
1975
Tongue
English
Weight
707 KB
Volume
46
Category
Article
ISSN
0021-8979

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## Abstract With the material quality of undoped indium nitride significantly improved, attention has more recently turned towards achieving control of the electrical properties of this infrared bandgap semiconductor. Of the candidate acceptors, only Mg has been reported in detail, primarily as it