✦ LIBER ✦

Electrical and photoluminescence properties of Ge-doped n-type GaAs Grown by molecular beam epitaxy

✍ Scribed by Ai-zhen Li; Shang-heng Xin; A. G. Milnes

Book ID: 112812077
Publisher: Springer US
Year: 1983
Tongue: English
Weight: 695 KB
Volume: 12
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02651636

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