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Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxy

✍ Scribed by De-Sheng, Jiang

Book ID: 120239685
Publisher: American Institute of Physics
Year: 1982
Tongue: English
Weight: 913 KB
Volume: 53
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.330581

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