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Electrical and optical properties of beryllium-implanted Mg-doped GaN

โœ Scribed by Yu, Chang-Chin; Chu, C. F.; Tsai, J. Y.; Lin, C. F.; Wang, S. C.


Book ID
118229789
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
409 KB
Volume
92
Category
Article
ISSN
0021-8979

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This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100