This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100
β¦ LIBER β¦
Electrical Properties of Acceptor Levels in Mg-Doped GaN
β Scribed by Y. Nakano; T. Jimbo
- Book ID
- 104556496
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 594 KB
- Volume
- 0
- Category
- Article
- ISSN
- 1862-6351
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## Mg x Zn 1-x O (x=0.01-0.3) nanoparticles were synthesized by the sol-gel technique using solutions of Mg and Zn based organometalic compounds. The electrical properties of Mg doped zinc oxide (ZnO) were studied within wide temperature range from 300 to 500 K under the N 2 gas flow (flow rate: 2