Optical properties of Mg-implanted GaN
β Scribed by S.Y. Xie; Y.D. Zheng; P. Chen; R. Zhang; B. Shen; H. Chen
- Book ID
- 106024213
- Publisher
- Springer
- Year
- 2002
- Tongue
- English
- Weight
- 76 KB
- Volume
- 75
- Category
- Article
- ISSN
- 1432-0630
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π SIMILAR VOLUMES
This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100
As-grown highly resistive (>10 7 W cm) GaN samples were exposed to implantation of 24 Mg + ions with the energy of 120 keV and dose of 2 Γ 10 14 cm --2 . Isochronal rapid thermal annealing (RTA) was carried out for the Mg-implanted samples at 850, 950 and 1050 C, respectively. Under z(x, x)z 0 backs