✦ LIBER ✦

Electrical activation of low-fluence boron implantation in silicon studied by PCV in combination with SIMS

✍ Scribed by J. Kempf

Publisher: Springer
Year: 1988
Tongue: English
Weight: 437 KB
Volume: 45
Category: Article
ISSN: 1432-0630
DOI: 10.1007/bf00618767

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Activation annealing of ultra-low-energy

Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling

✍ E Schroer; V Privitera; F Priolo; E Napolitani; A Carnera 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 233 KB

We present our investigations on the clustering, diffusion and electrical activation of ultra-low-energy ( 51 keV) implanted boron in crystalline silicon during annealing in the temperature range between 900 and 12008C. We show that during the initial stage of the annealing, boron is bound to non-di

Atomic transport properties and electric

Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon

✍ V Privitera; E Napolitani; F Priolo; S Moffatt; A La Magna; G Mannino; A Carnera 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 368 KB

Electrical activation of solid-phase epi

Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

✍ J.J. Hamilton; E.J.H. Collart; B. Colombeau; C. Jeynes; M. Bersani; D. Giuberton 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 144 KB

Study of the redistribution of high dose

Study of the redistribution of high dose Sb and P implants in silicon by combination of SIMS and TEM

✍ G. Stingeder; M. Grasserbauer; P. Pongratz; W. Kuhnert; I. Wippel; P. Skalicky; 📂 Article 📅 1988 🏛 John Wiley and Sons 🌐 English ⚖ 295 KB

Impurity transport in the ASDEX edge pla

Impurity transport in the ASDEX edge plasma studied by a combination of passive and active probes with SIMS analysis

✍ G. Staudenmaier; P. Staib; S. Rossnagel 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 510 KB

Comparison of p+–n junction formed by BF

Comparison of p+–n junction formed by BF2+ and B+ implantation in silicon microstrip detector with low and high thermal budget: impact of fluorine on electrical characteristics

✍ Ajay K. Srivastava; Ashutosh Bhardwaj; Kirti Ranjan; Namrata; Sudeep Chatterji; 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 458 KB