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Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC

✍ Scribed by Laube, M.; Schmid, F.; Pensl, G.; Wagner, G.; Linnarsson, M.; Maier, M.

Book ID: 111909931
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 340 KB
Volume: 92
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1479462

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## Abstract We report a full wafer size investigation of the homogeneity of electrical properties in the case of co‐implanted nitrogen and phosphorus ions in 4H–SiC semi‐insulating wafers. To match standard industrial requirements, implantation was done at room temperature. To achieve a detailed el