Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC

✍ Scribed by Tucker, J.B.; Rao, M.V.; Papanicolaou, N.A.; Mittereder, J.; Elasser, A.; Clock, A.W.; Ghezzo, M.; Holland, O.W.; Jones, K.A.

• Book ID: 114538945
• Publisher: IEEE
• Year: 2001
• Tongue: English
• Weight: 155 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.974687