✦ LIBER ✦
Fabrication and characterization of 4H-SiC P-N junction diodes by selective-epitaxial growth using TaC as the mask
✍ Scribed by C. Li; P. Losee; J. Seiler; I. Bhat; T. P. Chow
- Book ID
- 107453418
- Publisher
- Springer US
- Year
- 2005
- Tongue
- English
- Weight
- 545 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0361-5235
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