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High-temperature high-dose implantation of N+and Al+ions in 6H-SiC

✍ Scribed by R. A. Yankov; M. Voelskow; W. Kreissig; D. V. Kulikov; J. Pezoldt; W. Skorupa; Yu. V. Trushin; V. S. Kharlamov; D. N. Tsigankov

Book ID
110123274
Publisher
SP MAIK Nauka/Interperiodica
Year
1997
Tongue
English
Weight
79 KB
Volume
23
Category
Article
ISSN
1063-7850

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Using a proton microbeam PIXE and RBS, a formation of local surface segregations of aluminum in an iron layer has Ε½ 16 17 y2 . been found, for the first time, at an initial stage of high-dose intensive implantation from 8 = 10 to =10 cm . Using a slow positron beam, a profile of vacancy defects, whi