High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C

✍ Scribed by R. Nipoti; A. Nath; S.B. Qadri; Y-L. Tian; C. Albonetti; A. Carnera; Mulpuri V. Rao

• Book ID: 107457398
• Publisher: Springer US
• Year: 2011
• Tongue: English
• Weight: 639 KB
• Volume: 41
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/s11664-011-1794-7