𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effects of the inclination direction of vicinal m-plane sapphire substrates on the crystal quality of m-plane GaN film

✍ Scribed by Youngji Cho; Sungkuk Choi; Gyung-Suk Kil; Hyun-Jae Lee; Takafumi Yao; Jun-Mo Yang; Jungho Yoo; Jangwoo Kwon; Jiho Chang

Book ID
104022435
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
853 KB
Volume
325
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

✦ Synopsis

Herein is a discussion of how the structural and optical properties of m-plane GaN (m-GaN) films are affected by the inclination direction of vicinal m-plane sapphire substrate. The m-GaN films were grown on three different types of substrates inclined toward the a-axis direction, the c-axis direction, and with no inclination. We found that m-GaN film grown on an m-plane sapphire inclined in the a-axis direction showed the highest quality with a smooth surface and a low stacking fault density. A model is proposed that shows how the surface step of a substrate can reduce the generation of stacking fault in m-GaN film.

📜 SIMILAR VOLUMES

Growth of AlGaN/GaN heterostructure on v
Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method
✍ Isobe, Yasuhiro ;Iida, Daisuke ;Sakakibara, Tatsuyuki ;Iwaya, Motoaki ;Takeuchi, 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 579 KB

## Abstract We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal __m__‐plane free‐standing GaN substrates prepared by the Na flux method. The miscut angle in the LPE‐GaN substrate has a great influence on the surface morphology and crystalline quality of epitaxial Ga

The effect of indium concentration on th
The effect of indium concentration on the optical properties of a-plane InGaN/GaN quantum wells grown on r-plane sapphire substrates
✍ Badcock, T. J. ;Hao, R. ;Moram, M. A. ;Dawson, P. ;Kappers, M. J. ;Humphreys, C. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 158 KB

## Abstract We report on the optical properties of a series of non‐polar __a__‐plane InGaN/GaN multiple quantum well (QW) structures of constant well width and varying indium concentration. The emission spectrum is dominated by recombination at regions of the QW intersected by basal plane stacking

The field emission properties of nonpola
The field emission properties of nonpolara-plane n-type GaN films grown on nano-patterned sapphire substrates
✍ Sun, Lili ;Yan, Fawang ;Wang, Junxi ;Zhang, Huixiao ;Zeng, Yiping ;Wang, Guohong 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 220 KB

## Abstract Si‐doped nonpolar __a__ ‐plane GaN films were grown on nano‐patterned sapphire substrates by a low‐pressure metal organic chemical vapor deposition (MOCVD) system. The structure, morphology and field emission properties of the sample were studied by means of high‐resolution X‐ray diffra