Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method
✍ Scribed by Isobe, Yasuhiro ;Iida, Daisuke ;Sakakibara, Tatsuyuki ;Iwaya, Motoaki ;Takeuchi, Tetsuya ;Kamiyama, Satoshi ;Akasaki, Isamu ;Amano, Hiroshi ;Imade, Mamoru ;Kitaoka, Yasuo ;Mori, Yusuke
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 579 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal m‐plane free‐standing GaN substrates prepared by the Na flux method. The miscut angle in the LPE‐GaN substrate has a great influence on the surface morphology and crystalline quality of epitaxial GaN and AlGaN films. In particular, AlGaN/GaN on a 4° miscut‐angle LPE‐GaN substrate shows large step bunching, small‐miscut‐angle LPE GaN substrate is essential for fabricating on FET structure with a flat surface.