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Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors

✍ Scribed by Moser, N. A.; Gillespie, J. K.; Via, G. D.; Crespo, A.; Yannuzzi, M. J.; Jessen, G. H.; Fitch, R. C.; Luo, B.; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.

Book ID: 120000784
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 348 KB
Volume: 83
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1628394

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