The effect of implantation temperature and oxygen dose on the structure of as-implanted separation by implantation of oxygen (SIMOX) wafers was studied by means of Rutherford backscattering spectrometry and ion channelling, secondary ion mass spectrometry and cross-sectional transmission electron mi
โฆ LIBER โฆ
Effects of substrate temperature and nominal dose on the microstructure and optical properties of indium implanted high purity silica
โ Scribed by T.S. Anderson; R.H. Magruder III; R.A. Weeks; R.A. Zuhr
- Book ID
- 115991235
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 428 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0022-3093
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